Mechanism of THz to DC conductivity in graphene/ silicon heterostructure
首發時間:2021-09-30
Abstract:The microscopic mechanism of THz to DC conductance of graphene/silicon heterostructure is analyzed. It is found that the linear part of the DC conductance is due to the intraband contribution of grapheme, and the nonlinear part is due to the electric field-induced optical rectification effect and Exciton Valley Hall effect. The carrier transport model of graphene/silicon heterostructure is established, and the experimental results are in agreement well with the hypothetical model. It provides a theoretical basis and ideas for developing a new low cost passive device of THz to DC conductance.
keywords: Graphene/Silicon heterostructure Terahertz to DC Nonlinear conductance
點擊查看論文中文信息
石墨烯/硅異質結的太赫茲轉直流電導機理
摘要:本文分析了石墨烯/硅異質結構的太赫茲轉直流電導的微觀機理。發現其直流電導的線性部分源于石墨烯的帶內隧穿,非線性部分源于電場感應極化效應和激子谷霍爾效應。建立了石墨烯/硅異質結構載流子輸運模型,實驗結果與理論模型一致。本文結論為開發一種新的低成本太赫茲轉直流電導無源器件提供了理論基礎和思路。
引用
No.****
動態公開評議
共計0人參與
勘誤表
石墨烯/硅異質結的太赫茲轉直流電導機理
評論
全部評論